Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R15981/fulltext
Reference23 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs
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