Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs

Published:1997-05-26 Issue:21 Volume:78 Page:4071-4074
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Heitz R.,Ramachandran T. R.,Kalburge A.,Xie Q.,Mukhametzhanov I.,Chen P.,Madhukar A.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.78.4071/fulltext

Reference21 articles.

1. Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films

2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

4. Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin films

Cited by 162 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the ultra-low arsenic flux on characteristics of In(As) nanostructures formed during droplet epitaxy;Journal of Physics: Conference Series;2021-12-01

2. Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures;AIP Advances;2021-07-01

3. Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes;Nanomaterials;2021-04-30

4. Directed self-assembly of InAs quantum dots using in situ interference lithography;Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII;2020-03-02

5. Advanced Technologies for Quantum Photonic Devices Based on Epitaxial Quantum Dots;Advanced Quantum Technologies;2019-10-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3