Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)-Reference-Cited by-同舟云学术

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Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)

Published:2011-05 Issue:1 Volume:323 Page:219-222
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kamiya Itaru,Shirasaka Takeo,Shimomura Kenichi,Tex David M.

Funder

Strategic Research Infrastructure Program, the Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Quantum wires, quantum boxes and related structures: Physics, device potentials and structural requirements

3. Quantum microstructure devices

4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

5. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy;Applied Science and Convergence Technology;2017-07-31

2. Influence of the growth conditions on the optical and structural properties of self-assembled InAs/GaAs quantum dots for low As/In ratio;Applied Surface Science;2017-01

3. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface;Semiconductors;2014-01

4. Influence of hole shape/size on the growth of site-selective quantum dots;Nanoscale Research Letters;2013-12

5. As flux dependence on RHEED transients during InAs quantum dot growth;Journal of Crystal Growth;2013-09

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