Transmission electron microscopy investigation of AlN growth on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
2. Indium nitride (InN): A review on growth, characterization, and properties
3. Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)
4. The growth and characterization of an InN layer on AlN/Si (111)
5. The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy
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1. Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid;Journal of Applied Physics;2023-11-15
2. Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films;physica status solidi (b);2019-07-03
3. A study on Ga Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy;Applied Surface Science;2019-07
4. Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy;Journal of Applied Physics;2018-05-07
5. High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition;CrystEngComm;2017
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