High quality thin AlN epilayers grown on Si(110) substrates by metal-organic chemical vapor deposition
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C6CE02542K
Reference35 articles.
1. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
2. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
3. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
4. The Improvement of DC Performance in AlGaN–GaN HEFTs With Isoelectronic Al-Doped Channels
5. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
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