Behaviours of the lattice-polarity inversion in AlN growth on c-Al2O3 (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition
Author:
Affiliation:
1. Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki, 305-8568, Japan
Abstract
Funder
Japan Society for the Promotion of Science
National Institute for Materials Science
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE00652A
Reference60 articles.
1. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
2. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
3. Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
4. The Improvement of DC Performance in AlGaN–GaN HEFTs With Isoelectronic Al-Doped Channels
5. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
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2. The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire;Nanoscale Advances;2024
3. Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates;Crystal Growth & Design;2023-03-17
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