Evaluations of the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the <i>m</i>-plane (101̄0) sapphire substrate-Reference-Cited by-同舟云学术

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Evaluations of the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the m-plane (101̄0) sapphire substrate

Published:2023 Issue:37 Volume:25 Page:5296-5303
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Shen Xuqiang¹^ORCID,Matsuhata Hirofumi¹,Kojima Kazutoshi¹

Affiliation:

1. Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki, 305-8568, Japan

Abstract

We investigate the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the m-plane (101̄0) sapphire substrate using electron microscopy techniques.

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00700F

Reference58 articles.

1. InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates

2. Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar ( 20 2 ¯ 1 ¯) InGaN/GaN light-emitting diodes

3. Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

4. The calculation of semipolar orientations for wurtzitic semiconductor heterostructures: application to nitrides and oxides

5. Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates

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