Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar ( 20 2 ¯ 1 ¯) InGaN/GaN light-emitting diodes
Author:
Affiliation:
1. Center for High Technology Materials (CHTM), University of New Mexico, Albuquerque, New Mexico 87106, USA
Funder
Army Research Office
Army Research Laboratory
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5036761
Reference29 articles.
1. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting
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3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
4. Auger recombination in InGaN measured by photoluminescence
5. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
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