InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates-Reference-Cited by-同舟云学术

InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates

Published:2010-04-30 Issue:5 Volume:3 Page:052702
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Hsu Po Shan,Kelchner Kathryn M.,Tyagi Anurag,Farrell Robert M.,Haeger Daniel A.,Fujito Kenji,Ohta Hiroaki,DenBaars Steven P.,Speck James S.,Nakamura Shuji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=5/a=052702/pdf

Reference20 articles.

1. Progress in ultra-compact green frequency doubled optically pumped surface emitting lasers

2. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

3. Nonpolar and Semipolar Group III Nitride-Based Materials

4. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes

5. Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

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3. Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect;Results in Physics;2022-03

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