Author:
QI Zhanguo,LIU Lei,WANG Shouzhi,WANG Guogong,YU Jiaoxian,WANG Zhongxin,DUAN Xiulan,XU Xiangang,ZHANG Lei
Publisher
Shanghai Institute of Ceramics
Subject
Inorganic Chemistry,General Materials Science
Reference86 articles.
1. HARIMA H. Properties of GaN and related compounds studied by means of Raman scattering. Journal of Physics: Condensed Matter, 2002, 14(38): R967.
2. ZHANG Y M, WANG J F, CAI D M, et al. Progress on GaN single crystal substrate grown by hydride vapor phase epitaxy. Journal of Synthetic Crystals, 2020, 49(11): 1970.
3. ZHANG Y M, WANG J F, CAI D M, et al. Growth and doping of bulk GaN by hydride vapor phase epitaxy. Chinese Physics B, 2020, 29(2): 026104.
4. 田媛. HVPE生长自支撑GaN单晶及其性质研究. 济南: 山东大学晶体材料研究所博士学位论文, 2016.
5. 胡海啸. 自支撑GaN单晶的HVPE生长及加工研究. 济南: 山东大学晶体材料研究所博士学位论文, 2020.
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