Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes-Reference-Cited by-同舟云学术

Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes

Published:2018-05-07 Issue:19 Volume:112 Page:191102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Monavarian M.¹,Rashidi A.¹^ORCID,Aragon A. A.¹,Nami M.¹^ORCID,Oh S. H.²,DenBaars S. P.³^ORCID,Feezell D.¹

Affiliation:

1. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA

2. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA

3. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

National Science Foundation

U.S. Department of Defense

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5032115

Reference25 articles.

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2. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

3. GHz bandwidth GaAs light-emitting diodes

4. Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

5. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

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