Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Published:2018-01-22 Issue:4 Volume:112 Page:041104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Monavarian M.¹,Rashidi A.¹^ORCID,Aragon A. A.¹,Oh S. H.²,Rishinaramangalam A. K.¹,DenBaars S. P.³^ORCID,Feezell D.¹

Affiliation:

1. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

3. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

National Science Foundation

U.S. Department of Defense

UC | UCSB | Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5019730

Reference25 articles.

1. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

2. Efficiency droop in light-emitting diodes: Challenges and countermeasures

3. The efficiency challenge of nitride light-emitting diodes for lighting

4. Efficiency droop in nitride-based light-emitting diodes

5. Strain-induced polarization in wurtzite III-nitride semipolar layers

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