Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2949087
Reference12 articles.
1. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2. A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation
3. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
4. International Symposium on Power Semiconductor Devices and ICs;Yoshida S.,2006
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