Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics-Reference-Cited by-同舟云学术

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Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics

Published:2023-09 Issue: Volume:5 Page:100263
ISSN:2772-6711
Container-title:e-Prime - Advances in Electrical Engineering, Electronics and Energy
language:en
Short-container-title:e-Prime - Advances in Electrical Engineering, Electronics and Energy

Author:

Mehta J.^ORCID,Abid I.,Elwaradi R.,Cordier Y.,Medjdoub F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Engineering,Energy Engineering and Power Technology

Reference24 articles.

1. 1st IEEE Work. Wide Bandgap Power Devices Appl. WiPDA 2013 - Proc;Ryu,2013

2. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

3. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

4. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

5. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate;IEEE Electron Device Letters;2024-06

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