Interface formation mechanism of GaN on Al-pretreated ScAlMgO4 (0001) substrates
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2. OXIDE Corporation, Hokuto, Yamanashi 408-0302, Japan
Funder
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01525
Reference38 articles.
1. III-Nitride Semiconductors and their Modern Devices
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. GaN Growth Using GaN Buffer Layer
4. ScAlMgO4: An Oxide Substrate for GaN Epitaxy
5. Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates
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1. Metal–Organic Vapor Phase Epitaxy of High‐Quality GaN on Al‐Pretreated Sapphire Substrates Without Using Low‐Temperature Buffer Layers;physica status solidi (b);2024-05-19
2. Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (b);2024-03-22
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