Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films-Reference-Cited by-同舟云学术

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Correlation of Structure and EBIC Contrast from Threading Dislocations in AlN/Si Films

Published:2019-07-03 Issue:11 Volume:256 Page:1900279
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Vacek Petr¹²,Kostelník Petr³,Gröger Roman¹

Affiliation:

1. Institute of Physics of Materials & CEITEC IPMCzech Academy of SciencesŽižkova 2261600BrnoCzech Republic

2. Central European Institute of Technology (CEITEC)Brno University of TechnologyPurkyňova 12361200BrnoCzech Republic

3. ON Semiconductor1. Máje 223075661Rožnov pod RadhoštěmCzech Republic

Funder

Brno University of Technology

Ministry of Education, Youth and Sports

Technology Agency of the Czech Republic

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900279

Reference38 articles.

1. Dislocations and their reduction in GaN

2. Dislocations in semiconductors

3. Proposition of a model elucidating the AlN-on-Si (111) microstructure

4. Atomic and Electronic Structure of Mixed and Partial Dislocations in GaN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid;Journal of Applied Physics;2023-11-15

2. Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions;Applied Physics Express;2022-08-12

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