Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Author:

Pongrácz Jakub12ORCID,Vacek Petr3ORCID,Gröger Roman1ORCID

Affiliation:

1. Institute of Physics of Materials and CEITEC IPM, Czech Academy of Sciences 1 , Žižkova 513/22, 61600 Brno, Czech Republic

2. Central European Institute of Technology, Brno University of Technology 2 , Purkyňova 656/123, 61200 Brno, Czech Republic

3. Department of Materials Science and Metallurgy, University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, UK

Abstract

Epitaxial growth of wurtzite AlN films on Si {111} results in 19% lattice misfit, which gives rise to a large density of threading dislocations with different recombination rates of electron–hole pairs. Here, we investigate types and distributions of threading dislocations of the MOVPE-grown 200 nm AlN/Si {111} film, whereby the dislocations are visualized using the technique of wet chemical etching. Atomic force microscopy suggests the existence of four different types of etch pits without any topological differences. Cross-sectional transmission electron microscope studies on etched samples are employed to associate the types of dislocations with the shapes of their etch pits. The recombination activity of individual dislocations was quantified by measuring the electron beam induced current and by correlative measurement of topography, secondary electron imaging, and the electron beam absorbed current. The strongest recombination activity was obtained for the m + c-type (mixed), c-type (screw), and a + c-type (mixed) threading dislocations, whereas the a-type (edge) threading dislocations were nearly recombination-inactive.

Funder

Technologická Agentura České Republiky

Central European Institute of Technology

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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