Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates-Reference-Cited by-同舟云学术

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

Published:1983-03 Issue:5 Volume:42 Page:427-429
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoshida S.,Misawa S.,Gonda S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.93952

Reference20 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. Preparation, Stability, and Luminescence of Gallium Nitride

3. Luminescence of Zn‐ and Cd‐doped GaN

4. Growth Kinetics and Catalytic Effects in the Vapor Phase Epitaxy of Gallium Nitride

5. Properties of VPE‐grown GaN doped with Al and some iron‐group metals

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