Proposition of a model elucidating the AlN-on-Si (111) microstructure-Reference-Cited by-同舟云学术

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Proposition of a model elucidating the AlN-on-Si (111) microstructure

Published:2018-06-07 Issue:21 Volume:123 Page:215701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mante N.¹,Rennesson S.²^ORCID,Frayssinet E.²,Largeau L.³,Semond F.²,Rouvière J. L.⁴,Feuillet G.¹,Vennéguès P.²

Affiliation:

1. Université Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

2. Université Côte d'Azur, CRHEA-CNRS, rue B. Grégory, F-06560 Valbonne, France

3. C2N-CNRS, Route de Nozay, F-91460 Marcoussis, France

4. Université Grenoble Alpes, CEA, INAC, MINATEC Campus, F-38054 Grenoble, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5017550

Reference27 articles.

1. Prospects of III-nitride optoelectronics grown on Si

2. Epitaxial challenges of GaN on silicon

3. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

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1. Atomic Evolution Mechanism and Suppression of Edge Threading Dislocations in Nitride Remote Heteroepitaxy;Nano Letters;2024-06-11

2. Chemical Kinetics of the Nitridation Process of Silicon Si(111) Substrates at Different Ammonia Fluxes;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

3. High quality GaN microplatelets grown by metal-organic vapor phase epitaxy on patterned silicon-on-insulator substrates: Toward micro light-emitting diodes;Journal of Applied Physics;2023-06-23

4. YAlO3 reinforced AlN composite ceramics with significantly improved mechanical properties and thermal shock resistance;Ceramics International;2023-06

5. Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale;Journal of Applied Crystallography;2023-04-25

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