Epitaxial challenges of GaN on silicon
Author:
Abstract
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Reference36 articles.
1. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
2. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
3. Strain relaxation in AlN epitaxial layers grown on GaN single crystals
4. Structure of domain walls in Al/Si() γ-phase
5. Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al‐induced p+ doping
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