Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique-Reference-Cited by-同舟云学术

Demonstration of 1200-V E-Mode GaN-on-Sapphire Power Transistor With Low Dynamic ON-Resistance Based on Active Passivation Technique

Published:2024-02 Issue:2 Volume:45 Page:220-223
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cui Jiawei¹^ORCID,Wang Maojun¹^ORCID,Wu Yanlin¹^ORCID,Yang Junjie¹^ORCID,Yang Han²^ORCID,Yu Jingjing¹^ORCID,Li Teng¹^ORCID,Yang Xuelin²,Liu Xiaosen³^ORCID,Cheng Kai⁴,Wang Jinyan¹^ORCID,Shen Bo²,Wei Jin¹^ORCID

Affiliation:

1. School of Integrated Circuits, Peking University, Beijing, China

2. School of Physics, Peking University, Beijing, China

3. School of Integrated Circuits, Tsinghua University, Beijing, China

4. Enkris Semiconductor Inc., Suzhou, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10415514/10352160.pdf?arnumber=10352160

Reference30 articles.

1. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

2. Planar GaN Power Integration – The World is Flat

3. Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs

4. Epitaxial challenges of GaN on silicon

5. GaN-on-Si Power Technology: Devices and Applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Report of GaN HEMTs on 8-in Sapphire;IEEE Transactions on Electron Devices;2024-07

2. Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective hole Injection;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications;IEEE Transactions on Electron Devices;2024-06

4. Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage;RSC Advances;2024