Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al‐induced p+ doping-Reference-Cited by-同舟云学术

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Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al‐induced p+ doping

Published:1995-09 Issue:5 Volume:13 Page:2399-2406
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wen H. J.,Dähne‐Prietsch M.,Bauer A.,Cuberes M. T.,Manke I.,Kaindl G.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579480

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