Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method
3. Faceted and Vertically Aligned GaN Nanorod Arrays Fabricated without Catalysts or Lithography
4. Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy
5. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy;Journal of Crystal Growth;2011-03
2. The Growth of GaN Nanorods with Different Temperature by Molecular Beam Epitaxy;Journal of The Electrochemical Society;2010
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