Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy-Reference-Cited by-同舟云学术

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Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Published:2011-03 Issue:1 Volume:318 Page:450-453
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lin Chia-Hung,Abe Ryota,Maruyama Takahiro,Naritsuka Shigeya

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. The Blue Laser Diode: The Complete Story, Second Revised and Enlarged Edition;Nakamura,2000

2. Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN∕AlN double-buffer layers

3. Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

4. Effect of template morphology on the efficiency of InGaN∕GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

5. High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

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1. A-plane GaN microchannel epitaxy on r-plane sapphire substrate using patterned graphene mask;Journal of Crystal Growth;2024-03

2. A-Plane Gan Microchannel Epitaxy on R-Plane Sapphire Substrate Using Patterned Graphene Mask;2023

3. Low angle incidence microchannel epitaxy of GaN using graphene as a mask;Journal of Crystal Growth;2021-06

4. Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth;Japanese Journal of Applied Physics;2018-06-27

5. Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport;Journal of Crystal Growth;2017-06

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