Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN∕AlN double-buffer layers-Reference-Cited by-同舟云学术

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Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN∕AlN double-buffer layers

Published:2008-07 Issue:4 Volume:26 Page:587-591
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Li Zhen-Yu,Lan Shan-Ming,Uen Wu-Yih,Chen Ying-Ru,Chen Meng-Chu,Huang Yu-Hsiang,Ku Chien-Te,Liao Sen-Mao,Yang Tsun-Neng,Wang Shing-Chung,Chi Gou-Chung

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2929849

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER;Surface Review and Letters;2013-04

2. The Research about the III-Nitride Compounds Epitaxially Grown on Si Substrate;Advanced Materials Research;2011-11

3. Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE;Materials Letters;2011-05

4. Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy;Journal of Crystal Growth;2011-03

5. Synthesis of InN nanowires grown on droplets formed with Au and self-catalyst on Si(111) by using metalorganic chemical vapor deposition;Journal of Materials Research;2010-09

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