Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth-Reference-Cited by-同舟云学术

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Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

Published:2018-06-27 Issue:8 Volume:57 Page:085501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kusakabe Yasuhiro,Sugiyama Hayata,Takenaka Shun,Suzuki Yohei,Maruyama Takahiro,Naritsuka Shigeya,Shimizu Kazuo

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8/a=085501/pdf

Reference32 articles.

1. Heteroepitaxy of Semiconductors

2. Epitaxial Growth of III-V Compounds

3. Reduction of the field spectrum linewidth of a multiple quantum well laser in a high magnetic field—spectral properties of quantum dot lasers

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