Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport-Reference-Cited by-同舟云学术

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Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport

Published:2017-06 Issue: Volume:467 Page:18-28
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jaud Alexandre,Auvray Laurent^ORCID,Kahouli Abdelkarim,Abi-Tannous Tony,Linas Sébastien,Ferro Gabriel,Brylinski Christian

Funder

French Commissariat Général à l’Investissement

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2. Planar Edge Termination Design and Technology Considerations for 1.7-kV 4H-SiC PiN Diodes

3. p-Type doping of SiC by high dose Al implantation—problems and progress

4. Theory of doping and defects in III–V nitrides

5. Ion implantation into GaN

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid‐Phase Epitaxy;digital Encyclopedia of Applied Physics;2023-01-18

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