Mechanisms of Aluminium-Induced Crystallization and Layer Exchange Upon Low-Temperature Annealing of Amorphous Si/Polycrystalline Al Bilayers-Reference-Cited by-同舟云学术

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Mechanisms of Aluminium-Induced Crystallization and Layer Exchange Upon Low-Temperature Annealing of Amorphous Si/Polycrystalline Al Bilayers

Published:2009-06-01 Issue:6 Volume:9 Page:3364-3371
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Wang J. Y.,Wang Z. M.,Jeurgens L. P. H.,Mittemeijer E. J.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal–alloy induced crystallization of amorphous silicon;Journal of Applied Physics;2020-07-28

2. Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates;Journal of Crystal Growth;2015-06

3. Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-05

4. Typical Applications of AES and XPS;Springer Series in Surface Sciences;2012-06-01

5. Piezoresistivity of polycrystalline silicon applying the AIC process-route;Sensors and Actuators A: Physical;2011-12

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