Chemical Kinetics of the Nitridation Process of Silicon Si(111) Substrates at Different Ammonia Fluxes-Reference-Cited by-同舟云学术

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Chemical Kinetics of the Nitridation Process of Silicon Si(111) Substrates at Different Ammonia Fluxes

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Bashkatov Dmitriy D.¹^ORCID,Malin Timur V.²^ORCID,Mansurov Vladimir G.²^ORCID,Milakhin Denis S.¹^ORCID,Zhuravlev Konstantin S.²^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics (ISP SB RAS), Novosibirsk State Technical University,Dept. of Physics and Engineering of Semiconductor Structures,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics (ISP SB RAS),Dept. of Physics and Engineering of Semiconductor Structures,Novosibirsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225173.pdf?arnumber=10225173

Reference29 articles.

1. Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon

2. Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine

3. Proposition of a model elucidating the AlN-on-Si (111) microstructure

4. Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si;lange;J Cryst Growth,2019

5. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

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