The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy-Reference-Cited by-同舟云学术

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The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

Published:2006-03 Issue:2 Volume:288 Page:247-253
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu C.-L.,Shen C.-H.,Chen H.-Y.,Tsai S.-J.,Lin H.-W.,Lee H.-M.,Gwo S.,Chuang T.-F.,Chang H.-S.,Hsu T.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

3. Band Gap of Hexagonal InN and InGaN Alloys

4. Unusual properties of the fundamental band gap of InN

5. Temperature dependence of the fundamental band gap of InN

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3. Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure;Journal of Applied Physics;2019-07-14

4. High-electron-mobility InN epilayers grown on silicon substrate;Applied Physics Letters;2018-04-16

5. Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template;Journal of Applied Physics;2016-05-28

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