Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4952380
Reference43 articles.
1. Low-field electron mobility in wurtzite InN
2. When group-III nitrides go infrared: New properties and perspectives
3. Temperature dependence of the fundamental band gap of InN
4. Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy
5. Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy
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