High electron mobility in nearly-dislocation-free hexagonal InN

Abstract

Abstract We demonstrate a recorded directed-probed electron mobility of ∼4850 cm2 V−1s−1 in nearly-dislocation-free hexagonal InN at room temperature by Hall-effect measurement. Those extremely high-quality InN are achieved through droplet-assisted epitaxy on a GaN/sapphire template by molecular beam epitaxy. They behave as crystals with a diameter of several micrometers, being confirmed to be nearly free of threading dislocation by transmission electron microscopy. The achievement of such high-mobility InN provides promising opportunities for fabricating high-speed electronic devices.