Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Author:

Imran Ali12,Sulaman Muhammad34ORCID,Yousaf Muhammad1,Anwar Muhammad Abid1,Qasim Muhammad4,Dastgeer Ghulam5,Min‐Dianey Kossi A. A.16,Wang Baoyu1,Wang Xinqiang2

Affiliation:

1. School of Micro and Nano Electronics ZJU‐Hangzhou Global Technological and Innovation Center Zhejiang University Hangzhou 310027 P. R. China

2. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics Peking University Beijing 100071 P. R. China

3. Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems Center for Micro‐Nanotechnology Key Lab of Advanced Optoelectronic Quantum Design and Measurement Ministry of Education School of Physics Beijing Institute of Technology Beijing 100081 P. R. China

4. Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology School of Optics and Photonics Beijing Institute of Technology Beijing 100081 P. R. China

5. Department of Physics and Astronomy Sejong University Seoul 05006 South Korea

6. Department of Physics Laboratoire Sur l'Energie Solaire Université de Lomé Lomé 01BP1515 Togo

Funder

Science Challenge Project

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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