Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics-Reference-Cited by-同舟云学术

Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

Published:2023-04-26 Issue:9 Volume:6 Page:7582-7592
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

de Oliveira Fernando M.¹^ORCID,Kuchuk Andrian V.¹²^ORCID,Lytvyn Petro M.²,Romanitan Cosmin³,Stanchu Hryhorii V.¹,Teodoro Marcio D.⁴,Ware Morgan E.¹⁵^ORCID,Mazur Yuriy I.¹^ORCID,Salamo Gregory J.¹

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

2. V. E. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, Kyiv 03028, Ukraine

3. The National Institute for Research and Development in Microtechnologies (IMT), Bucharest 077190, Romania

4. Physics Department, Federal University of São Carlos, 13565-905 São Carlos, São Paulo, Brazil

5. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

Funder

Ministerul Cercetarii, Inovarii si Digitalizarii

Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c00732

Reference68 articles.

1. Emerging Applications of III‐Nitride Nanocrystals

2. Low-cost Fabrication of Tunable Band Gap Composite Indium and Gallium Nitrides

3. High electron mobility in nearly-dislocation-free hexagonal InN

4. Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN

5. Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

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