Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors

Abstract

Abstract The InN/GaN digital alloy is a superlattice-like nanostructure formed by periodically stacking ultra-thin InN and GaN layers. In this study, we calculate the electron mobility in InN/GaN digital alloy channel high electron mobility transistors (HEMTs) by performing a single-particle Monte Carlo simulation. The results of the simulation show that alloy-induced scatterings have little impact and the electron mobility significantly improves as the effective indium mole fraction of the channel increases. This contrasts with InGaN alloy channel HEMTs, where alloy disorder and random dipole scatterings have a strong impact and the electron mobility decreases as the indium mole fraction of the channel increases.