Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN-Reference-Cited by-同舟云学术

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Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

Published:2008-02-19 Issue:7 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Rinke Patrick,Winkelnkemper M.,Qteish A.,Bimberg D.,Neugebauer J.,Scheffler M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.075202/fulltext

Reference138 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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