Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature-Reference-Cited by-同舟云学术

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Published:2024-02 Issue: Volume:220 Page:112833
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

He Zhen,Huang Haoxuan,Huang Jiahui,Xiang Guojiao,Zhang Jinming,Yue Zhiang,Zhang Xian,Wang Yongqi,Ding Jinwei,Li Jingzhe,He Hangyu,Wang Lukai,Li Jie,Zhao Yang^ORCID,Wang Hui^ORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference44 articles.

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5. Epitaxial growth of hexagonal pillar structure InN single crystals on sapphire (11−20) substrate by halide CVD method under atmospheric pressure;Sakamoto;J. Ceram. Soc. JAPAN.,2023

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