High-electron-mobility InN epilayers grown on silicon substrate-Reference-Cited by-同舟云学术

High-electron-mobility InN epilayers grown on silicon substrate

Published:2018-04-16 Issue:16 Volume:112 Page:162102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Huapeng¹,Wang Xinqiang¹²,Chen Zhaoying¹,Zheng Xiantong¹,Wang Ping¹,Sheng Bowen¹,Wang Tao¹,Rong Xin¹,Li Mo³,Zhang Jian³,Yang Xuelin¹^ORCID,Xu Fujun¹,Ge Weikun¹,Shen Bo¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

3. Microsystem & Terahertz Research Center, No. 596, Yinhe Road, Shuangliu, Chengdu 610200, China

Funder

CAEP Microsystem and THz Science and Technology Foundation

National Key Research and Development Program of China

NSAF

Science Challenge Project

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5017153

Reference50 articles.

1. Prospects of III-nitride optoelectronics grown on Si

2. Sixteen years GaN on Si

3. GaN on Si Technologies for Power Switching Devices

4. High electron mobility AlGaN/GaN heterostructure on (111) Si

5. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

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