High electron mobility AlGaN/GaN heterostructure on (111) Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125878
Reference14 articles.
1. The Polarity of GaN: a Critical Review
2. The effect of Si doping on the defect structure of GaN/AlN/Si(111)
3. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
4. Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
5. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
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