Chip-Level Degradation of InGaN-Based Optoelectronic Devices
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-58175-0_2
Reference113 articles.
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3. A. Sedhain, J. Li, J.Y. Lin, H.X. Jiang, Nature of deep center emissions in GaN. Appl. Phys. Lett. 96(15), 5–8 (2010). doi: 10.1063/1.3389497
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5. M. La Grassa, M. Meneghini, C. De Santi, M. Mandurrino, M. Goano, F. Bertazzi, R. Zeisel, B. Galler, G. Meneghesso, E. Zanoni, Ageing of InGaN-based LEDs: effects on internal quantum efficiency and role of defects. Microelectron. Reliab. 55(9), 1775–1778 (2015). doi: 10.1016/j.microrel.2015.06.103
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