Sixteen years GaN on Si-Reference-Cited by-同舟云学术

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Sixteen years GaN on Si

Published:2015-02-25 Issue:5 Volume:252 Page:1063-1068
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Dadgar Armin¹

Affiliation:

1. Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg; Universitätsplatz 2; Magdeburg 39106 Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference73 articles.

1. The Use of Metalorganics in the Preparation of Semiconductor Materials

2. Ultraviolet and violet GaN light emitting diodes on silicon

3. Multicolored light emitters on silicon substrates

4. E. M. Chumbes A. T. Schremer J. A. Smart D. Hogue J. Komiak J. R. Shealy 1999 397

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1. Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration;IEEE Transactions on Power Electronics;2024-10

2. Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film;Applied Physics Letters;2024-09-09

3. Mechanism of SiC formation by Si surface carbonization using CO gas;Applied Surface Science;2024-07

4. Recent advances in micro-pixel light emitting diode technology;Applied Physics Reviews;2024-05-16

5. Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD;Journal of Physics D: Applied Physics;2024-05-13

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