A study on Ga Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
Author:
Funder
Ministry of Education
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference35 articles.
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4. Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
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