Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121474
Reference9 articles.
1. Electronic and structural properties of GaN grown by hydride vapor phase epitaxy
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4. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
5. Theory of Point Defects and Complexes in GaN
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