Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference27 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates
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4. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
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