Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Morphological study of non-polar (11-20) GaN grown on r-plane (1-102) sapphire
3. Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates
4. Nonpolarm-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
5. Wide-band-tunable photomixers using resonant laser-assisted field emission
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3. Macrodefects investigation in a-GaN films;AIP Advances;2022-02-01
4. Effect of substrate nitridation and a buffer layer on the growth of a non-polar a-plane GaN epitaxial layer on an r-plane sapphire substrate by laser molecular beam epitaxy;Materials Advances;2022
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