Macrodefects investigation in a-GaN films
Author:
Affiliation:
1. JSC “Optron”, 105187 Moscow, Russia
2. National University of Science and Technology “MISIS”, 119049 Moscow, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0073377
Reference35 articles.
1. Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates
2. High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace
3. Growth and doping of semipolar GaN grown on patterned sapphire substrates
4. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
5. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates
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1. Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film;Journal of Vacuum Science & Technology A;2023-08-10
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