Fabrication and properties of semi-polar (1-101) and (11-22) InGaN/GaN light emitting diodes on patterned Si substrates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2. Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
3. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
4. Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate
5. Al doping in (1−101)GaN films grown on patterned (001)Si substrate
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1. How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field;Laser & Photonics Reviews;2024-08-31
2. Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits;physica status solidi (RRL) – Rapid Research Letters;2022-09-25
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