Al doping in (1−101)GaN films grown on patterned (001)Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2734098
Reference19 articles.
1. Wavelength Dependence of InGaN Laser Diode Characteristics
2. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
3. Growth of () GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE
4. Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate
5. Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE
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1. Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography;physica status solidi (b);2024-06-21
2. Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%;Communications Materials;2023-07-04
3. Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates;AIP Advances;2023-02-01
4. Enhanced Energy Resolution of GaN-on-Sapphire p-i-n Alpha-Particle Detector With Isoelectronic Al-Doped i-GaN Layer;IEEE Transactions on Nuclear Science;2021-08
5. Self-Assembly Semipolar AlN Nanopyramids Grown on Powder-Compressed AlN Substrates;physica status solidi (a);2017-10-05
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