Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1758300
Reference17 articles.
1. Optical Properties of Strained AlGaN and GaInN on GaN
2. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
3. Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy
4. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
5. Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates
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