Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

Author:

Zhang Jie12ORCID,Yang Xuelin3ORCID,Ma Hongping12ORCID,Zhang Qingchun12ORCID,Shen Bo34

Affiliation:

1. Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering and Technology, Fudan University 1 , Shanghai 200433, China

2. Shanghai Research Center for Silicon Carbide Power Devices Engineering and Technology, Fudan University 2 , Shanghai 200433, China

3. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 3 , Beijing 100871, People’s Republic of China

4. Collaborative Innovation Center of Quantum Matter 4 , Beijing 100871, People’s Republic of China

Abstract

We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films. When the Al concentration in the GaN epitaxial film is increased to 0.85%, the dislocations extend almost in the growth direction, contributing to a strain-free epitaxial film. We suggest that the Al atoms could substitute for Ga vacancies at the dislocation cores on the growth surface and then inhibit the dislocation inclinations. The suppressed dislocation inclinations lead to a reduced relaxation of compressive strain. The results pave a new way to control dislocation movements and strain in GaN epitaxial films on Si substrates.

Funder

Key Research and Development Program of Guangdong Province

National Key Research and Development Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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